Diodes IncorporatedZXTN5551FLTAGP BJT
Trans GP BJT NPN 160V 0.6A 330mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 180 | |
| 160 | |
| 6 | |
| 1.2@5mA@50mA|1@1mA@10mA | |
| 0.15@1mA@10mA|0.2@5mA@50mA | |
| 0.6 | |
| 30@50mA@5V|80@10mA@5V|80@1mA@5V | |
| 330 | |
| 130(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.02(Max) |
| Largeur du paquet | 1.4(Max) |
| Longueur du paquet | 3.04(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Use this versatile NPN ZXTN5551FLTA GP BJT from Diodes Zetex to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |