onsemiNSS40501UW3T2GGP BJT

Trans GP BJT NPN 40V 5A 1500mW 3-Pin WDFN EP T/R

ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN NSS40501UW3T2G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.

1.660 pezzi: Spedisce domani

    Total$0.46Price for 1

    • Service Fee  $7.00

      Spedisce domani

      Ships from:
      Stati Uniti d'America
      Date Code:
      2148+
      Manufacturer Lead Time:
      6 settimane
      Minimum Of :
      1
      Maximum Of:
      1660
      Country Of origin:
      Malaysia
         
      • Price: $0.4558
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Spedisce domani

      Ships from:
      Stati Uniti d'America
      Date Code:
      2148+
      Manufacturer Lead Time:
      6 settimane
      Country Of origin:
      Malaysia
      • In Stock: 1.660 pezzi
      • Price: $0.4558