| RoHS (Unión Europea) | Compliant |
| ECCN (Estados Unidos) | EAR99 |
| Estatus de pieza | LTB |
| Código HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 0.75(Max) mm |
| Package Width | 2 mm |
| Package Length | 2 mm |
| PCB changed | 3 |
| Standard Package Name | DFN |
| Supplier Package | WDFN EP |
| Pin Count | 3 |
| Lead Shape | No Lead |
ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN NSS40501UW3T2G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
