onsemiNSS40501UW3T2GGP BJT

Trans GP BJT NPN 40V 5A 1500mW 3-Pin WDFN EP T/R

ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN NSS40501UW3T2G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.

1,660 부품 : 내일 배송

    Total$0.46Price for 1

    • Service Fee  $7.00

      내일 배송

      Ships from:
      미국
      Date Code:
      2148+
      Manufacturer Lead Time:
      6 주
      Minimum Of :
      1
      Maximum Of:
      1660
      Country Of origin:
      말레이시아
         
      • Price: $0.4558
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 내일 배송

      Ships from:
      미국
      Date Code:
      2148+
      Manufacturer Lead Time:
      6 주
      Country Of origin:
      말레이시아
      • In Stock: 1,660 부품
      • Price: $0.4558