Compliant | |
EAR99 | |
Active | |
8541.10.00.80 | |
Automotive | No |
PPAP | No |
NPN | |
Bipolar Power | |
Si | |
Single | |
1 | |
300 | |
250 | |
7 | |
1.3@4mA@50mA | |
0.5@4mA@50mA | |
1 | |
20000 | |
40@20mA@10V | |
5000 | |
15(Min) | |
-65 | |
200 | |
Diameter | 9.4(Max) |
Mounting | Through Hole |
Package Height | 6.6(Max) |
PCB changed | 3 |
Standard Package Name | TO |
Supplier Package | TO-39 |
3 | |
Lead Shape | Through Hole |
Do you require a transistor in your circuit operating in the high-voltage range? This NPN 2N3440 general purpose bipolar junction transistor, developed by Semelab (TT electronics), is your solution. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 5000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 7 V.