onsemi 2SB1202S-E GP BJT
Trans GP BJT PNP 50V 3A 1000mW 3-Pin(3+Tab) TP Bag
製品技術仕様
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 5.5 |
| Package Width | 2.3 |
| Package Length | 6.5 |
| PCB changed | 3 |
| Tab | Tab |
| Supplier Package | TP |
| 3 |
Implement this PNP 2SB1202S-E GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
シンボルと足跡
| EDA / CAD Models |
