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onsemiBC807-25LT1GGP BJT

Trans GP BJT PNP 45V 0.5A 300mW 3-Pin SOT-23 T/R

Design various electronic circuits with this versatile PNP BC807-25LT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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      • In Stock: 3,435,000 部分
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