Infineon Technologies AGBC817UPNE6327HTSA1GP BJT
Trans GP BJT NPN/PNP 45V 0.5A 330mW Automotive AEC-Q101 6-Pin SC-74 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.6 |
| Package Length | 2.9 |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SC-74 |
| 6 | |
| Lead Shape | Gull-wing |
Implement this versatile npn and PNP BC817UPNE6327HTSA1 GP BJT from Infineon Technologies into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |