Taiwan SemiconductorBC846A RFGP BJT

Trans GP BJT NPN 65V 0.1A 200mW 3-Pin SOT-23 T/R

The three terminals of this NPN BC846A RF GP BJT from Taiwan Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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