Infineon Technologies AGBC847PNH6727XTSA1GP BJT
Trans GP BJT NPN/PNP 45V 0.1A 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R
Compliant | |
EAR99 | |
LTB | |
8541.21.00.75 | |
Automotive | Yes |
PPAP | Unknown |
NPN|PNP | |
Bipolar Small Signal | |
Si | |
Dual | |
2 | |
50 | |
45 | |
6 | |
0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
150 | |
0.3@0.5mA@10mA|0.65@5mA@100mA | |
0.1 | |
150 | |
200@2mA@5V | |
250 | |
-65 | |
150 | |
Tape and Reel | |
Automotive | |
Mounting | Surface Mount |
Package Height | 0.9(Max) |
Package Width | 1.25 |
Package Length | 2 |
PCB changed | 6 |
Standard Package Name | SOT |
Supplier Package | SOT-363 |
6 | |
Lead Shape | Gull-wing |
Infineon Technologies has the solution to your circuit's high-voltage requirements with their npn and PNP BC847PNH6727XTSA1 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.