Infineon Technologies AGBCR108WH6327XTSA1デジタルBJT - プリバイアス
Trans Digital BJT NPN 50V 0.1A 250mW 3-Pin SOT-323 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Single | |
| 50 | |
| 100 | |
| 70@5mA@5V | |
| 170 | |
| 2.2 | |
| 0.3@0.5mA@10mA | |
| 0.047 | |
| 250 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.9(Max) |
| Package Width | 1.25 |
| Package Length | 2 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-323 |
| 3 | |
| Lead Shape | Gull-wing |
The NPN BCR108WH6327XTSA1 digital transistor from Infineon Technologies is your alternative to traditional BJTs in that it can provide digital signal processing power. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 250 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |