Infineon Technologies AGBCR129E6327HTSA1デジタルBJT - プリバイアス

Trans Digital BJT NPN 50V 0.1mA 200mW 3-Pin SOT-23 T/R Automotive AEC-Q101

Apply the applications of a traditional bi polar junction transistor, in digital circuits with this NPN BCR129E6327HTSA1 digital transistor from Infineon Technologies, ideal for any digital signal processing circuit! This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 120@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.

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Quantity Increments of 3000 Minimum 39000
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    • Price: $0.0360
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