Infineon Technologies AGBCR185E6327HTSA1デジタルBJT - プリバイアス
Trans Digital BJT PNP 50V 0.1mA 200mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Single | |
| 50 | |
| 100 | |
| 70@5mA@5V | |
| 200 | |
| 10 | |
| 0.3@0.5mA@10mA | |
| 0.21 | |
| 200 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Are you looking to build a digital signal processing device? The PNP BCR185E6327HTSA1 digital transistor, developed by Infineon Technologies, can provide a solution. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |