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Infineon Technologies AGBCR191E6327HTSA1デジタルBJT - プリバイアス

Trans Digital BJT PNP 50V 0.1mA 200mW 3-Pin SOT-23 T/R Automotive AEC-Q101

Infineon Technologies' PNP BCR191E6327HTSA1 digital transistor is the ideal component to use in situations where digital signal processing is required. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 50@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.

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Quantity Increments of 3000 Minimum 36000
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    • Price: $0.0325
    1. 36000+$0.0325
    2. 75000+$0.0297
    3. 150000+$0.0273
    4. 300000+$0.0256