| 欧州RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Material | Si |
| Configuration | Dual Common Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Process Technology | DMOS |
| Maximum Drain Source Voltage (V) | 70 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum VSWR | 20(Min) |
| Maximum Continuous Drain Current (A) | 5 |
| Typical Input Capacitance @ Vds (pF) | 60(Max)@28V |
| Maximum Power Dissipation (mW) | 100000 |
| Output Power (W) | 40 |
| Typical Power Gain (dB) | 13(Min) |
| Maximum Frequency (MHz) | 1000 |
| Minimum Frequency (MHz) | 1 |
| Typical Drain Efficiency (%) | 50(Min) |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 200 |
| Mounting | Screw |
| Package Height | 5.08 |
| Package Width | 6.35 |
| Package Length | 18.9 |
| PCB changed | 5 |
| Supplier Package | Case DQ |
| Pin Count | 5 |
