| 欧州RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Material | Si |
| Configuration | Single Dual Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | DMOS |
| Maximum Drain Source Voltage (V) | 125 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum VSWR | 20(Min) |
| Maximum Continuous Drain Current (A) | 6 |
| Typical Input Capacitance @ Vds (pF) | 120(Max)@50V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 3(Max)@50V |
| Typical Output Capacitance @ Vds (pF) | 50(Max)@50V |
| Typical Forward Transconductance (S) | 1.6(Min) |
| Maximum Power Dissipation (mW) | 87000 |
| Output Power (W) | 40 |
| Typical Power Gain (dB) | 16(Min) |
| Maximum Frequency (MHz) | 175 |
| Minimum Frequency (MHz) | 1 |
| Typical Drain Efficiency (%) | 50(Min) |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 200 |
| Mounting | Screw |
| Package Height | 6.6 |
| Package Width | 9.52 |
| Package Length | 24.76 |
| PCB changed | 4 |
| Supplier Package | Case DA |
| Pin Count | 4 |
