Diode Rectifier Bridge Single 1.2KV Tray
| 欧州RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.10.00.80 |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Bridge Type | Single Phase |
| Configuration | Single |
| Peak Reverse Repetitive Voltage (V) | 1200 |
| Peak Non-Repetitive Forward Surge Current (A) | 150 |
| Peak Forward Voltage (V) | 1.85(Typ)@20A |
| Peak Reverse Current (uA) | 58(Typ) |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tray |
| EDA / CAD Models |
|
DDB2U20N12W1RFB11BPSA1 Infineon Technologies AG
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Diode Rectifier Bridge Single 1.2KV Tray
| 欧州RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.10.00.80 |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Bridge Type | Single Phase |
| Configuration | Single |
| Peak Reverse Repetitive Voltage (V) | 1200 |
| Peak Non-Repetitive Forward Surge Current (A) | 150 |
| Peak Forward Voltage (V) | 1.85(Typ)@20A |
| Peak Reverse Current (uA) | 58(Typ) |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tray |
| EDA / CAD Models |
