Diodes IncorporatedDZTA42-13GP BJT
Trans GP BJT NPN 300V 0.5A 2000mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 300 | |
| 300 | |
| 6 | |
| 0.1 | |
| 0.9@2mA@20mA | |
| -65 to 150 | |
| 0.5@2mA@20mA | |
| 0.5 | |
| 100 | |
| 25@1mA@10V|40@10mA@10V|40@30mA@10V | |
| 2000 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.6 mm |
| Package Width | 3.5 mm |
| Package Length | 6.5 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| 4 | |
| Lead Shape | Gull-wing |
This specially engineered NPN DZTA42-13 GP BJT from Diodes Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |