onsemiEMC3DXV5T1GデジタルBJT - プリバイアス
Trans Digital BJT NPN/PNP 50V 0.1A 500mW 5-Pin SOT-553 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 0.55 |
| Package Width | 1.2 |
| Package Length | 1.6 |
| PCB changed | 5 |
| Standard Package Name | SOT |
| Supplier Package | SOT-553 |
| 5 | |
| Lead Shape | Flat |
In addition to offering some of the benefits of traditional BJTs, the npn and PNP EMC3DXV5T1G digital transistor, developed by ON Semiconductor, can be used in digital signal processing circuits as well. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual common base and collector configuration.
| EDA / CAD Models |