Trans IGBT Module N-CH 3300V 330A 2200W 10-Pin IHV73-3 Tray
| ECCN (US) | EAR99 |
| Part Status | Obsolete |
| HTS | FF200R33KF2CNOSA1 |
| Automotive | Unknown |
| PPAP | Unknown |
| Channel Type | N |
| Configuration | Dual |
| Maximum Collector-Emitter Voltage (V) | 3300 |
| Typical Collector Emitter Saturation Voltage (V) | 3.4 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Power Dissipation (W) | 2200 |
| Maximum Continuous Collector Current (A) | 330 |
| Maximum Gate Emitter Leakage Current (uA) | 0.4 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 125 |
| Packaging | Tray |
| Mounting | Screw |
| Package Height | 38 |
| Package Width | 73 |
| Package Length | 140 |
| PCB changed | 10 |
| Supplier Package | IHV73-3 |
| Pin Count | 10 |
| EDA / CAD Models |
|
この商品は廃盤となりました
FF200R33KF2CNOSA1 Infineon Technologies AG
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Trans IGBT Module N-CH 3300V 330A 2200W 10-Pin IHV73-3 Tray
| ECCN (US) | EAR99 |
| Part Status | Obsolete |
| HTS | FF200R33KF2CNOSA1 |
| Automotive | Unknown |
| PPAP | Unknown |
| Channel Type | N |
| Configuration | Dual |
| Maximum Collector-Emitter Voltage (V) | 3300 |
| Typical Collector Emitter Saturation Voltage (V) | 3.4 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Power Dissipation (W) | 2200 |
| Maximum Continuous Collector Current (A) | 330 |
| Maximum Gate Emitter Leakage Current (uA) | 0.4 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 125 |
| Packaging | Tray |
| Mounting | Screw |
| Package Height | 38 |
| Package Width | 73 |
| Package Length | 140 |
| PCB changed | 10 |
| Supplier Package | IHV73-3 |
| Pin Count | 10 |
| EDA / CAD Models |
