Infineon Technologies AG FS30R06W1E3BOMA1 IGBTモジュール
Trans IGBT Module N-CH 600V 45A 150W 18-Pin EASY1B-3 Tray

Trans IGBT Module N-CH 600V 45A 150W 18-Pin EASY1B-3 Tray
欧州RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
Automotive | No |
PPAP | No |
Technology | Field Stop|Trench |
Channel Type | N |
Configuration | Hex |
Maximum Collector-Emitter Voltage (V) | 600 |
Typical Collector Emitter Saturation Voltage (V) | 1.55 |
Maximum Gate Emitter Voltage (V) | ±20 |
Maximum Power Dissipation (W) | 150 |
Maximum Continuous Collector Current (A) | 45 |
Maximum Gate Emitter Leakage Current (uA) | 0.4 |
Minimum Operating Temperature (°C) | -40 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tray |
Mounting | Screw |
Package Height | 12 |
Package Width | 33.8 |
Package Length | 62.8 |
PCB changed | 18 |
Supplier Package | EASY1B-3 |
Pin Count | 18 |
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Trans IGBT Module N-CH 600V 45A 150W 18-Pin EASY1B-3 Tray
欧州RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
Automotive | No |
PPAP | No |
Technology | Field Stop|Trench |
Channel Type | N |
Configuration | Hex |
Maximum Collector-Emitter Voltage (V) | 600 |
Typical Collector Emitter Saturation Voltage (V) | 1.55 |
Maximum Gate Emitter Voltage (V) | ±20 |
Maximum Power Dissipation (W) | 150 |
Maximum Continuous Collector Current (A) | 45 |
Maximum Gate Emitter Leakage Current (uA) | 0.4 |
Minimum Operating Temperature (°C) | -40 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tray |
Mounting | Screw |
Package Height | 12 |
Package Width | 33.8 |
Package Length | 62.8 |
PCB changed | 18 |
Supplier Package | EASY1B-3 |
Pin Count | 18 |