Infineon Technologies AGIKW08T120FKSA1IGBTチップ

Trans IGBT Chip N-CH 1200V 16A 70W 3-Pin(3+Tab) TO-247 Tube

You won't need to worry about any lagging in your circuit with this IKW08T120FKSA1 IGBT transistor from Infineon Technologies. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 70000 mW. This IGBT transistor has an operating temperature range of -40 °C to 150 °C. It is made in a single configuration.

A datasheet is only available for this product at this time.