| 欧州RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8542.32.00.36 |
| Automotive | No |
| PPAP | No |
| DRAM Type | DDR3 SDRAM |
| Chip Density (bit) | 4G |
| Organization | 256Mx16 |
| Number of Internal Banks | 8 |
| Number of Words per Bank | 32M |
| Number of Bits/Word (bit) | 16 |
| Data Bus Width (bit) | 16 |
| Maximum Clock Rate (MHz) | 1866 |
| Maximum Access Time (ns) | 20 |
| Address Bus Width (bit) | 18 |
| Process Technology | CMOS |
| Minimum Operating Supply Voltage (V) | 1.425 |
| Typical Operating Supply Voltage (V) | 1.5 |
| Maximum Operating Supply Voltage (V) | 1.575 |
| Operating Current (mA) | 310 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 95 |
| Supplier Temperature Grade | Industrial |
| Number of I/O Lines (bit) | 16 |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 9 |
| Package Length | 13 |
| PCB changed | 96 |
| Supplier Package | TWBGA |
| Pin Count | 96 |
