| 欧州RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | NRND |
| HTS | 8542.32.00.28 |
| Automotive | Yes |
| PPAP | Yes |
| DRAM Type | DDR SDRAM |
| Chip Density (bit) | 512M |
| Organization | 16Mx32 |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 4M |
| Number of Bits/Word (bit) | 32 |
| Data Bus Width (bit) | 32 |
| Maximum Clock Rate (MHz) | 166 |
| Maximum Access Time (ns) | 5.5|8 |
| Address Bus Width (bit) | 15 |
| Interface Type | LVCMOS |
| Minimum Operating Supply Voltage (V) | 1.7 |
| Typical Operating Supply Voltage (V) | 1.8 |
| Maximum Operating Supply Voltage (V) | 1.95 |
| Operating Current (mA) | 110 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 85 |
| Supplier Temperature Grade | Automotive |
| Number of I/O Lines (bit) | 32 |
| Mounting | Surface Mount |
| Package Height | 0.8(Max) |
| Package Width | 8 |
| Package Length | 13 |
| PCB changed | 90 |
| Standard Package Name | BGA |
| Supplier Package | TFBGA |
| Pin Count | 90 |
| Lead Shape | Ball |
