Photointerrupter Transmissive 5mm Phototransistor
| 欧州RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Unconfirmed |
| Automotive | No |
| PPAP | No |
| Type | Transmissive |
| Number of Channels per Chip | 1 |
| Gap Width (mm) | 5 |
| Peak Wavelength (nm) | 940 |
| Maximum Rise Time (ns) | 20000(Typ) |
| Maximum Fall Time (ns) | 20000(Typ) |
| Output Device | Phototransistor |
| Maximum Forward Current (mA) | 50 |
| Maximum Collector Current (mA) | 20 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Maximum Reverse Voltage (V) | 5 |
| Maximum Power Dissipation (mW) | 75 |
| Minimum Operating Temperature (°C) | -25 |
| Maximum Operating Temperature (°C) | 85 |
| EDA / CAD Models |
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Photointerrupter Transmissive 5mm Phototransistor
| 欧州RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Unconfirmed |
| Automotive | No |
| PPAP | No |
| Type | Transmissive |
| Number of Channels per Chip | 1 |
| Gap Width (mm) | 5 |
| Peak Wavelength (nm) | 940 |
| Maximum Rise Time (ns) | 20000(Typ) |
| Maximum Fall Time (ns) | 20000(Typ) |
| Output Device | Phototransistor |
| Maximum Forward Current (mA) | 50 |
| Maximum Collector Current (mA) | 20 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Maximum Reverse Voltage (V) | 5 |
| Maximum Power Dissipation (mW) | 75 |
| Minimum Operating Temperature (°C) | -25 |
| Maximum Operating Temperature (°C) | 85 |
| EDA / CAD Models |
A datasheet is only available for this product at this time.
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