Not Compliant | |
EAR99 | |
Active | |
8541.29.00.95 | |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Power | |
Si | |
Single | |
1 | |
60 | |
60 | |
5 | |
1.3@15mA@150mA|2.6@50mA@500mA | |
-65 to 200 | |
0.4@15mA@150mA|1.6@50mA@500mA | |
0.6 | |
100@10mA@10V|100@150mA@10V|100@1mA@10V|50@500mA@10V|75@0.1mA@10V | |
500 | |
-65 | |
200 | |
Military | |
Diameter | 5.84(Max) |
Mounting | Through Hole |
Package Height | 5.33(Max) |
PCB changed | 3 |
Standard Package Name | TO |
Supplier Package | TO-18 |
3 | |
Lead Shape | Through Hole |
This PNP JAN2N2907A general purpose bipolar junction transistor from Semicoa Semiconductors is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.