| 欧州RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.21.00.95 |
| Automotive | No |
| PPAP | No |
| Type | NPN |
| Material | Si |
| Configuration | Dual |
| Number of Elements per Chip | 2 |
| Maximum Collector Base Voltage (V) | 40 |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.1@100uA@1mA |
| Maximum DC Collector Current (A) | 0.02 |
| Maximum Collector Cut-Off Current (nA) | 0.5 |
| Minimum DC Current Gain | 300@1mA|200@10uA |
| Maximum Transition Frequency (MHz) | 200(Typ) |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 85 |
| Packaging | Tube |
| Diameter | 9.4(Max) mm |
| Mounting | Through Hole |
| Package Height | 4.7(Max) mm |
| PCB changed | 6 |
| Standard Package Name | TO |
| Supplier Package | TO-78 |
| Pin Count | 6 |
| Lead Shape | Through Hole |
If you require a general purpose BJT that can handle high voltages, then the NPN MAT12AHZ BJT, developed by Analog Devices, is for you. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 40 V. This bipolar junction transistor has an operating temperature range of -40 °C to 85 °C.
