STMicroelectronics MD2310FX GP BJT
Trans GP BJT NPN 700V 14A 62000mW 3-Pin(3+Tab) ISOWATT218FX Tube
製品技術仕様
| EAR99 | |
| Obsolete | |
| MD2310FX | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 16.5(Max) |
| Package Width | 5.7(Max) |
| Package Length | 15.7(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | ISOWATT218FX |
| 3 |
Use this versatile NPN MD2310FX GP BJT from STMicroelectronics to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 62000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 700 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
シンボルと足跡
| EDA / CAD Models |
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