STMicroelectronicsMJD122-1ダーリントンBJT
Trans Darlington NPN 100V 8A 20000mW 3-Pin(3+Tab) IPAK Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 6.2(Max) mm |
| Package Width | 2.4(Max) mm |
| Package Length | 6.6(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO-251 |
| Supplier Package | IPAK |
| 3 |
With one of these NPN MJD122-1 Darlington transistors from STMicroelectronics, you'll be able to process much higher current gain values within your circuit. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4.5@80mA@8A V. This product's maximum continuous DC collector current is 5 A, while its minimum DC current gain is 1000@4A@4 V|100@8A@4V. It has a maximum collector emitter saturation voltage of 2@16mA@4A|4@80mA@8A V. Its maximum power dissipation is 1750 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |