| 欧州RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) mm |
| Package Width | 6.22(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Pin Count | 3 |
| Lead Shape | Gull-wing |
Amplify your current using ON Semiconductor's PNP MJD127G Darlington transistor in order to yield a higher current gain. This product's maximum continuous DC collector current is 8 A, while its minimum DC current gain is 1000@4A@4 V|100@8A@4V. It has a maximum collector emitter saturation voltage of 2@16mA@4A|4@80mA@8A V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4.5@80mA@8A V. Its maximum power dissipation is 1750 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.
