onsemiMJD243T4GGP BJT

Trans GP BJT NPN 100V 4A 1400mW 3-Pin(2+Tab) DPAK T/R

Do you require a transistor in your circuit operating in the high-voltage range? This NPN MJD243T4G general purpose bipolar junction transistor, developed by ON Semiconductor, is your solution. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1400 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

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5,362 個の部品 : 本日発送

    Total$1.03Price for 1

    • Service Fee  $7.00

      本日発送

      Ships from:
      アメリカ合衆国
      Date Code:
      2220+
      Manufacturer Lead Time:
      13 週間
      Minimum Of :
      1
      Maximum Of:
      5362
      Country Of origin:
      中国
         
      • Price: $1.0272
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 本日発送

      Ships from:
      アメリカ合衆国
      Date Code:
      2220+
      Manufacturer Lead Time:
      13 週間
      Country Of origin:
      中国
      • In Stock: 5,362 部分
      • Price: $1.0272