欧州RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8541.29.00.95 |
Automotive | No |
PPAP | No |
Channel Type | P |
Configuration | Single |
Maximum Gate Source Voltage (V) | -25 |
Maximum Drain Gate Voltage (V) | 25 |
Maximum Power Dissipation (mW) | 225 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Minimum Drain Saturation Current (mA) | 7 |
Mounting | Surface Mount |
Package Height | 0.94 |
Package Width | 1.3 |
Package Length | 2.9 |
PCB changed | 3 |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
Pin Count | 3 |
Lead Shape | Gull-wing |
Due to the very high input electrical resistance, there will be very little voltage-drop in your circuit if you use the MMBFJ175LT1G JFET transistor from ON Semiconductor. Its maximum power dissipation is 225 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This junction field effect transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.