Infineon Technologies AGMMBT2907ALT1HTSA1GP BJT
Trans GP BJT PNP 60V 0.6A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Do you require a transistor in your circuit operating in the high-voltage range? This PNP MMBT2907ALT1HTSA1 general purpose bipolar junction transistor, developed by Infineon Technologies, is your solution. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |