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onsemiMMBTA92LT1GGP BJT

Trans GP BJT PNP 300V 0.5A 300mW 3-Pin SOT-23 T/R

Use this versatile PNP MMBTA92LT1G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V.

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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 本日発送

      Ships from:
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      Date Code:
      2243+
      Manufacturer Lead Time:
      43 週間
      Country Of origin:
      中国
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      • Price: $0.1518
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      本日発送

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    • 2 日後に発送

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