onsemiMMUN2211LT3GデジタルBJT - プリバイアス

Trans Digital BJT NPN 50V 0.1A 400mW 3-Pin SOT-23 T/R

Thanks to ON Semiconductor, easily integrate NPN MMUN2211LT3G digital transistors into digital signal processing circuits. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 400 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 本日発送

      Ships from:
      アメリカ合衆国
      Date Code:
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      Manufacturer Lead Time:
      11 週間
      Country Of origin:
      中国
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      • Price: $0.0665
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      本日発送

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