| 欧州RoHS | Compliant |
| ECCN (US) | 3B992 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Configuration | Dual Common Source |
| Type | MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Mode of Operation | CW |
| Process Technology | LDMOS |
| Maximum Drain Source Voltage (V) | 179 |
| Maximum Gate Source Voltage (V) | 10 |
| Maximum VSWR | 65 |
| Typical Input Capacitance @ Vds (pF) | 760@65V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 2.9@65V |
| Typical Output Capacitance @ Vds (pF) | 203@65V |
| Typical Forward Transconductance (S) | 44.7 |
| Maximum Power Dissipation (mW) | 2247000 |
| Output Power (W) | 1800(Typ) |
| Typical Power Gain (dB) | 27.8 |
| Maximum Frequency (MHz) | 400 |
| Minimum Frequency (MHz) | 1.8 |
| Typical Drain Efficiency (%) | 75.6 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 150 |
| Mounting | Screw |
| Package Height | 4.83(Max) |
| Package Width | 10.29(Max) |
| Package Length | 41.28(Max) |
| PCB changed | 5 |
| Supplier Package | NI-1230H |
| Pin Count | 5 |
