| 欧州RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | NRND |
| HTS | 8541.29.00.75 |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Configuration | Dual Common Source |
| Type | MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Mode of Operation | Pulsed CW |
| Process Technology | LDMOS |
| Maximum Drain Source Voltage (V) | 179 |
| Maximum Gate Source Voltage (V) | 10 |
| Maximum VSWR | 65 |
| Typical Input Capacitance @ Vds (pF) | 299@65V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 1.1@65V |
| Typical Output Capacitance @ Vds (pF) | 84@65V |
| Typical Forward Transconductance (S) | 33.6 |
| Maximum Power Dissipation (mW) | 1333000 |
| Output Power (W) | 680(Typ) |
| Typical Power Gain (dB) | 26.4 |
| Maximum Frequency (MHz) | 400 |
| Minimum Frequency (MHz) | 1.8 |
| Typical Drain Efficiency (%) | 74.4 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Mounting | Screw |
| Package Height | 4.32(Max) mm |
| Package Width | 9.91(Max) mm |
| Package Length | 34.16(Max) mm |
| PCB changed | 5 |
| Supplier Package | NI-780 |
| Pin Count | 5 |
