onsemiMSD602-RT1GGP BJT

Trans GP BJT NPN 50V 0.5A 200mW 3-Pin SC-59 T/R

Compared to other transistors, the NPN MSD602-RT1G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 7 V.

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Quantity Increments of 3000 Minimum 3000
  • Manufacturer Lead Time:
    11 週間
    Country Of origin:
    中国
    • Price: $0.0220
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