onsemiNGTG35N65FL2WGIGBTチップ
Trans IGBT Chip N-CH 650V 70A 300W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| NGTG35N65FL2WG | |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 21.34(Max) |
| Package Width | 5.3(Max) |
| Package Length | 16.25(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 | |
| Lead Shape | Through Hole |
The NGTG35N65FL2WG IGBT transistor from ON Semiconductor will work effectively even with higher currents. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 300000 mW. This device utilizes field stop ii|trench technology. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.
| EDA / CAD Models |