| 欧州RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.49.70.80 |
| Automotive | No |
| PPAP | No |
| Type | IR Chip |
| Phototransistor Type | Phototransistor |
| Lens Shape Type | Domed |
| Material | Silicon |
| Number of Channels per Chip | 1 |
| Polarity | NPN |
| Half Intensity Angle Degrees (°) | 12 |
| Viewing Orientation | Top View |
| Maximum Rise Time (ns) | 15000 |
| Maximum Fall Time (ns) | 15000 |
| Maximum Light Current (uA) | 22000 |
| Maximum Dark Current (nA) | 100 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
| Maximum Power Dissipation (mW) | 250 |
| Fabrication Technology | NPN Transistor |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 125 |
| Packaging | Bag |
| Diameter | 5.84(Max) |
| Mounting | Through Hole |
| Package Height | 6.86(Max) |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-18 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
