NXP SemiconductorsPBSS5160QAZGP BJT
Trans GP BJT PNP 60V 1A 1000mW Automotive AEC-Q101 3-Pin DFN-D EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Mounting | Surface Mount |
| Package Height | 0.36(Max) |
| Package Width | 1 |
| Package Length | 1.1 |
| PCB changed | 3 |
| Standard Package Name | DFN |
| Supplier Package | DFN-D EP |
| 3 |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP PBSS5160QAZ GP BJT from NXP Semiconductors. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |