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onsemiPZT3904T1GGP BJT

Trans GP BJT NPN 40V 0.2A 1500mW 4-Pin(3+Tab) SOT-223 T/R

ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN PZT3904T1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
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