ToshibaRFM04U6P(TE12L,F)RF FET
Trans RF MOSFET N-CH 16V 2A 4-Pin(3+Tab) PW-Mini T/R
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Si | |
| Single Dual Source | |
| Depletion | |
| N | |
| 1 | |
| 16 | |
| 3 | |
| 20 | |
| 2 | |
| 7000 | |
| 4.3(Typ) | |
| 13.3 | |
| 70 | |
| -45 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.6(Max) |
| Package Width | 2.5 |
| Package Length | 4.6(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Supplier Package | PW-Mini |
| 4 |
This RFM04U6P(TE12L,F) RF amplifier from Toshiba is a semiconductor-based transistor that amplifies or switches electronic signals and electrical power in a circuit. Its maximum power dissipation is 7000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This RF power MOSFET has a minimum operating temperature of -45 °C and a maximum of 150 °C. This N channel RF power MOSFET operates in depletion mode.
| EDA / CAD Models |