onsemiSBC847CDW1T1GGP BJT

Trans GP BJT NPN 45V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R

Use this versatile NPN SBC847CDW1T1G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 380 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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26 個の部品 : 本日発送

    Total$0.19Price for 1

    • Service Fee  $7.00

      本日発送

      Ships from:
      アメリカ合衆国
      Date Code:
      1729+
      Manufacturer Lead Time:
      9 週間
      Minimum Of :
      1
      Maximum Of:
      26
      Country Of origin:
      中国
         
      • Price: $0.1943
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 本日発送

      Ships from:
      アメリカ合衆国
      Date Code:
      1729+
      Manufacturer Lead Time:
      9 週間
      Country Of origin:
      中国
      • In Stock: 26 部分
      • Price: $0.1943