onsemiSMMUN2233LT1GデジタルBJT - プリバイアス

Trans Digital BJT NPN 50V 0.1A 400mW 3-Pin SOT-23 T/R Automotive AEC-Q101

Apply the applications of a traditional bi polar junction transistor, in digital circuits with this NPN SMMUN2233LT1G digital transistor from ON Semiconductor, ideal for any digital signal processing circuit! This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 400 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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      Ships from:
      アメリカ合衆国
      Date Code:
      2211+
      Manufacturer Lead Time:
      11 週間
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      Country Of origin:
      中国
         
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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 明日発送

      Ships from:
      アメリカ合衆国
      Date Code:
      2211+
      Manufacturer Lead Time:
      11 週間
      Country Of origin:
      中国
      • In Stock: 26,896 部分
      • Price: $0.0708