Diodes IncorporatedZTX653GP BJT

Trans GP BJT NPN 100V 2A 1000mW 3-Pin E-Line

If you require a general purpose BJT that can handle high voltages, then the NPN ZTX653 BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.

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