Diodes IncorporatedZXT13P40DE6TAGP BJT

Trans GP BJT PNP 40V 3A 1700mW 6-Pin SOT-23 T/R

This specially engineered PNP ZXT13P40DE6TA GP BJT from Diodes Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 7.5 V. Its maximum power dissipation is 1700 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 7.5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
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