| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 50 | |
| 6 | |
| 1.2@100mA@2A | |
| 0.5@100mA@2A | |
| 5 | |
| 140@100mA@2V | |
| 1000 | |
| 150(Typ) | |
| -55 | |
| 150 | |
| Bag | |
| Mounting | Through Hole |
| Package Height | 5.5 |
| Package Width | 2.3 |
| Package Length | 6.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO-251 |
| Supplier Package | TP |
| 3 | |
| Lead Shape | Through Hole |
The NPN 2SD1802S-E general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |