Compliant | |
EAR99 | |
Active | |
8541.29.00.75 | |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Small Signal | |
Si | |
Single | |
1 | |
80 | |
65 | |
5 | |
0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
-55 to 150 | |
0.3@0.5mA@10mA|0.65@5mA@100mA | |
0.1 | |
15 | |
220@2mA@5V | |
300 | |
-55 | |
150 | |
Tape and Reel | |
Mounting | Surface Mount |
Package Height | 0.94 mm |
Package Width | 1.3 mm |
Package Length | 2.9 mm |
PCB changed | 3 |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
3 | |
Lead Shape | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP BC856BLT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V.
EDA / CAD Models |