onsemiBC856BLT1G通用双极型晶体管

Trans GP BJT PNP 65V 0.1A 300mW 3-Pin SOT-23 T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP BC856BLT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V.

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      Date Code:
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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 可以今天配送

      Ships from:
      美国
      Date Code:
      2332+
      Manufacturer Lead Time:
      22 星期
      Country Of origin:
      中国
      • In Stock: 57,326
      • Price: $0.0660
    • (3000)

      可以今天配送

      Increment:
      3000
      Ships from:
      美国
      Date Code:
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      Manufacturer Lead Time:
      22 星期
      Country Of origin:
      中国
      • In Stock: 426,000
      • Price: $0.0180